DEGRADATION OF DH LASERS CAUSED BY GROWTH OF DISLOCATION NETWORKSFIGIELSKI T.1980; CZECH. J. PHYS.; ISSN 0011-4626; CSK; DA. 1980; VOL. 30; NO 3; PP. 318-325; BIBL. 16 REF.Article

FORMATION OF ANTISITE DEFECTS BY GLIDING DISLOCATIONS IN SPHALERITE-STRUCTURE CRYSTALSFIGIELSKI T.1982; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1982; VOL. 29; NO 4; PP. 199-200; BIBL. 8 REF.Article

Antistructure disorder and its relation to dislocations in III―V semiconductorsFIGIELSKI, T.Crystal research and technology (1979). 1987, Vol 22, Num 10, pp 1263-1269, issn 0232-1300Article

Compensation in GaAs crystals due to anti-structure disorderFIGIELSKI, T.Applied physics. A, Solids and surfaces. 1984, Vol 35, Num 4, pp 255-261, issn 0721-7250Article

SPIN-DEPENDENT RECOMBINATION AT EXCHANGE-COUPLED DISLOCATION CENTRES IN SILICON.WOSINSKI T; FIGIELSKI T.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 83; NO 1; PP. 93-98; ABS. ALLEM.; BIBL. 13 REF.Article

Dislocations and antistructure defects in GaAsFIGIELSKI, T.Acta physica Polonica. A. 1987, Vol 72, Num 4, pp 537-545, issn 0587-4246Article

The stationary traversal time for tunnellingFIGIELSKI, T.Solid state communications. 1995, Vol 94, Num 2, pp 113-117, issn 0038-1098Article

Conservative climb of dislocations in crystals and its possible role in the processes of degradation of junction lasersFIGIELSKI, T.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1988, Vol 57, Num 5, pp 791-798, issn 0141-8610Article

NEW INSIGHT INTO THE NATURE OF DISLOCATION ELECTRON STATES IN GE PROVIDED BY HYDROSTATIC PRESSURE EXPERIMENTSPOHORYLES B; JUNG J; FIGIELSKI T et al.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 100; NO 1; PP. K87-K89; BIBL. 7 REF.Article

On the metastability of the EL2 defect in plastically deformed GaAsWOSINSKI, T; FIGIELSKI, T.Solid state communications. 1987, Vol 63, Num 10, pp 885-888, issn 0038-1098Article

Selected papers/Identification of defects in semiconductors, symposium: 7th. international summer school on defects in crystals, Szczyrk, Poland, 23-30 May, 1985FIGIELSKI, T.Acta physica Polonica. A. 1986, Vol 69, Num 3, pp 379-476, issn 0587-4246Conference Proceedings

Symmetry of the EL2 defect in GaAsFIGIELSKI, T; WOSINSKI, T.Physical review. B, Condensed matter. 1987, Vol 36, Num 2, pp 1269-1272, issn 0163-1829Article

Mesoscopic conductance oscillations associated with dislocations in semiconductorsFIGIELSKI, T; WOSINSKI, T; MAKOSA, A et al.Physica status solidi. B. Basic research. 2000, Vol 222, Num 1, pp 151-158, issn 0370-1972Article

Interface roughness : a reason of inaccessibility of the negative resistance region in resonant-tunneling devicesFIGIELSKI, T; WOSINSKI, T; MAKOSA, A et al.Superlattices and microstructures. 1998, Vol 24, Num 1, pp 69-74, issn 0749-6036Article

Arsenic antisite defects as the main electron traps in plastically deformed GaAsWOSINSKI, T; MORAWSKI, A; FIGIELSKI, T et al.Applied physics. A, Solids and surfaces. 1983, Vol 30, Num 4, pp 233-235, issn 0721-7250Article

Gettering or generation of the EL2 defects at dislocations in GaAs ?FIGIELSKI, T; WOSINSKI, T; MAKOSA, A et al.Physica status solidi. A. Applied research. 1992, Vol 131, Num 2, pp 369-375, issn 0031-8965Article

Double anion antisite in GaAs. The simplest member of EL2 family?FIGIELSKI, T; KACZMAREK, E; WOSINSKI, T et al.Applied physics. A, Solids and surfaces. 1985, Vol 38, Num 4, pp 253-261, issn 0721-7250Article

Quantum effects associated with misfit dislocations in GaAs-based heterostructuresWOSINSKI, T; FIGIELSKI, T; MAKOSA, A et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 367-370, issn 0921-5107Conference Paper

Electron-phonon interaction during resonant tunneling through a double-barrier heterostructureFIGIELSKI, T; MAKOSA, A; WOSINSKI, T et al.Solid state communications. 1994, Vol 91, Num 11, pp 913-917, issn 0038-1098Article

Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layerWOSINSKI, T; FIGIELSKI, T; PELYA, O et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 2, pp 472-476, issn 1862-6300, 5 p.Conference Paper

Giant planar Hall effect in ferromagnetic (Ga,Mn)As layersWOSINSKI, T; MAKOSA, A; SADOWSKI, J et al.Journal of alloys and compounds. 2006, Vol 423, Num 1-2, pp 248-251, issn 0925-8388, 4 p.Conference Paper

Metallic and non-metallic longitudinal conductance of grain boundaries in bicrystalline and polycrystalline germanium doped with mercury and antimonyFEDOTOV, A. K; MAZANIK, A. V; FIGIELSKI, T et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 48, pp 13111-13117, issn 0953-8984, 7 p.Conference Paper

Microcircuit tailoring in ferromagnetic semiconductor (Ga, Mn)AsFIGIELSKI, T; WOSINSKI, T; MORAWSKI, A et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 228-231, issn 0031-8965, 4 p.Conference Paper

Effect of spacer layer on quantum interference in double-barrier resonant tunneling structuresBELYAEV, A. E; VITUSEVICH, S. A; FIGIELSKI, T et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 235-238, issn 0039-6028Conference Paper

Memory Behavior of the Planar Hall Effect in Ferromagnetic (Ga, Mn)As/GaAs SuperlatticesWOSINSKI, T; WESELA, W; MAKOSA, A et al.Journal of superconductivity and novel magnetism. 2010, Vol 23, Num 1, pp 83-86, issn 1557-1939, 4 p.Conference Paper